The four bonding electrons of C, Si or Ge are lie respectively in the second, third and forth orbit. The energy gap for Ge is \(0\mathrm{\ldotp }72eV\), for Si is \(1\mathrm{\ldotp }1\,eV\)and for C is \(5\mathrm{\ldotp }54\,eV\). Hence, energy required to take out an electron from these atoms will be least for Ge and highest for C. Therefore, the C is insulator and and Si and Ge are intrinsic semiconductor.